Uses "DPAK+" package suited for high-speed switching
Toshiba Corporation (TOKYO:6502) has launched a 100V low-ON-resistance, low-leakage power MOSFET using the latest trench MOS process as the latest addition to its line-up for automotive applications.
The new product, "TK55S10N1", achieves low ON-resistance with a combination of a chip in the "U-MOS VIII-H series" fabricated with the latest 8th generation trench MOS process and a "DPAK+" package that utilizes copper connectors. The product is primarily suited for automotive applications, especially those that demand high-speed switching, such as switching regulators. Samples are available now with mass production scheduled to start in April 2013.
Drain-to-source voltage
VDSS (V)
Drain Current
ID (A)
Key Features
1. Low ON-resistance (VGS=10V)
RDS(ON) = 5.5mΩ(typ.)
2. Low leakage current IDSS=10μA (max) (VDS=rated voltage)
3. "DPAK+" package that realizes low-ON-resistance by utilizing Cu c
